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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD961 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A *Complement to Type 2SB869 APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 130 80 7 5 10 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD961 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 A hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ton Turn-On Time w w P 130-260 scs .i w IC= 0.5A; VCE= 2V IC= 0.5A; VCE= 10V .cn mi e 45 60 260 30 MHz 0.5 s ts Storage Time IC= 2A; IB1= -IB2= 0.2A 1.5 s tf Fall Time 0.15 s hFE-2 Classifications R 60-120 Q 90-180 isc Websitewww.iscsemi.cn 2 |
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